Our results provide insight into the highly intricate properties of topological material Zr Te 5. The WL effect is revealed by an increase in resistivity at low temperatures and by a peculiar MR behavior related to the phase shift induced by the magnetic field. This article gives a clear sign of WAL at low elds and non-saturating linear magneto-resistance (LMR) at higher elds. Thanks to its large phase coherence length, quantum sensors based on Bi 2 Se 3 can be built too, such as electron interferometers based on the AharonovBohm effect or Josephson junctions where Bi 2 Se 3 constitutes the weak link. The phase coherence length l shows a power law dependence with temperature, l T1/2, revealing an electronelectron interaction-dominated dephasing mechanism. Coming to the phase coherence dependence on temperature, the de-phasing mechanism in Bi 0.95 Sb 0.05 single crystal is found to be governed by both electron-electron scattering and electron-phonon scattering. Last, all the transport properties in thin Zr Te 5 crystals show strong two-dimensional characteristics. SO and phase coherence length l have been extracted. Meanwhile, universal conductance fluctuations have temperature and gate voltage dependence that is similar to that of the phase coherence length. Notably, the temperature-dependent phase coherence length extracted from weak antilocalization agrees with strong electron-electron scattering in the sample. Such sublimed-salt-assisted growth of high-quality few-layered VSe 2 and the observation of WAL pave the way for future spintronic and valleytronic applications. The coexistence of the two effects manifests itself in corroborating evidence presented in the temperature and magnetic field dependence of the resistance. The phase coherence length l shows a power law dependence with temperature, l T-1/2, revealing an electron-electron interaction-dominated dephasing mechanism. weak anti-localization and reflect-less tunneling, etc. Here we present detailed magnetotransport studies of few-layer Zr Te 5 devices, in which electron-electron interactions and weak antilocalization are observed. topological phase of quantum matter with earlier representative examples such as the 5/2. Thin Zr Te 5 crystals, on the other hand, were much less explored experimentally. But the phase coherence length can reach up to 100nm to 1 m below the liquid helium temperature. where is the digamma function, B h/8eL is the characteristic magnetic field required to break phase coherence, is equal +1 for WL and 1/2 for WAL, when only one helical surface state contributes to the conductivity and 1 when both the upper and lower surface states are involved. Our results are helpful for understanding the quantum transport properties of SnTe.Much effort has been devoted to the electronic properties of relatively thick Zr Te 5 crystals, focusing on their three-dimensional topological effects. Meanwhile, as the temperature decreases, the temperature dependence of phase coherence length gradually changes from l ϕ∼ T −1 to l ϕ∼ T −0.5, suggesting that the dominant mechanism of phase decoherence switches from electron–phonon scattering to electron–electron scattering. A close analysis of the WAL data shows that the number of transport channels contributing to WAL increases monotonously with decreasing temperatures, reaching N=2.8 at T=1.6 K in one of the devices, which indicates the decoupling of Dirac cones at low temperatures. Even though there are several tools to investigate the influence of. An external magnetic field destroys interference conditions, resulting in a magnetoresistance carrying quantitative information about phase coherence length and spin scattering length 4. Due to the polycrystalline nature and the relatively low mobility of the films, the background of conventional magnetoresistance was greatly suppressed, and clean WAL signals, which are well described by the Hikami–Larkin–Nagaoka equation, were obtained at low temperatures. This is the weak antilocalization (WAL) effect, readily observable when l SO l. In this article, we present our study on WAL in polycrystalline SnTe films deposited by magnetron sputtering. Previous works on weak antilocalization (WAL) of SnTe were mostly carried out in MBE-grown films, where the signals of WAL usually coexist with a large parabolic background of classical magnetoresistance. Xiaodong Li 1, Yang Yang 1, Xiaocui Wang 2,3, Peng Zhu 2, Fanming Qu 3, Zhiwei Wang 2 and Fan Yang 1,*ġ Center for Joint Quantum Studies and Department of Physics, School of Science, Tianjin University, Tianjin 300350, ChinaĢ Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, Chinaģ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Weak Antilocalization in Polycrystalline SnTe Films Deposited by Magnetron Sputtering
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